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DD-CA-XXX-001

This is a single mode edge-emitting laser diode chip emitting at O-band CWDM wavelengths for uncooled applications up to 25 Gb/s. This distributed-feedback (DFB) laser is based on ridge-waveguide structure with multiple-quantum-well (MQW) design. This laser features high optical power output, high SMSR and wide working temperature range.


Features
  • Modulation rate up to 25 Gbps

  • Operating temperature range -40 to 85°C

  • Complied with Telcordia GR-468

  • Key parameter
  • Absolute Maximum Ratings
  • Recommended Bonding condition
  • Dimensions and layout

Key parameter

Parameter

Symbol

Min

Type

Max

Unit

Test conditions

Threshold Current

Ith


812

mA

@T=25°C


2025

@T=85°C

Slope Efficiency

SE0.300.35

W/A

Ith+20 @25°C

0.200.25

Ith +20 @85°C 

Optical output power

Pf5.07

mW

Ith +20 @25°C


45

Ith +20 @85°C

Forward Voltage

Vf
1.122

V

If= Ith +20

Series Resistance

Rs


812

Ω

Ith +20 

Bias Current

Iop



80

mA

CW

Reverse leakage current 

Ir


0.010.1

mA

@ -2V

Peak Wavelength


λp


λc

-9

λc*

λc

+9

nm

@ Pf = 5 mW,-40~85°C

Wavelength/temperature

coefficient

dλ/dT


0.090.12

nm/°C

-40~85°C

Side Mode Suppression Ratio

SMSR

3545

dB

@ Pf = 5 mW,-40~85°C

Farfield(Vertical)

θ⊥

303540

degree

@ Ith +20

Farfield(Horizontal)

θ//

202530

degree

@ Ith +20

3dB Bandwidth


18

24

GHz

@ Ith +30

More

Absolute Maximum Ratings

Parameter

Symbol

Units

Min

Max

Storage Temperature

Ts

°C

-40100

Operating Temperature

To

°C

-4085

Forward power

PF

mW


30

Forward Current

IF

mA


150

Reverse Voltage

Vr

V


2

ESD level

ESD

V

500


More

Recommended Bonding condition

Process

Recommended Conditions

Die attachment

(Die Bonding)

Solder

AuSn

Temperature

<350

Dwell time

<10 sec

Pressure

30 g

Ambient

N2 flow

Wire Bonding

Au Wire

Ball bond

Diameter of wire

25 µm

Weight

30 g


Temperature

<200

More

Dimensions and layout

20301.jpg
Length * Wide * Thickness:250±10 µm(L)* 170±10 µm(W)* 95±10 µm(H)

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