DD-BA-270-001
This is a 1270 nm single mode edge-emitting laser diode chip for uncooledapplications up to 10 Gb/s. This distributed-feedback (DFB) laser is based on ridge-waveguide structure with a multiple-quantum-well (MQW) design. This laser featureshigh optical power output, high SMSR, wide working temperature range and small farfield angles.
Low threshold current
Modulation rate up to 3.2 Gbps
Operating temperature range -40 to 85°C
Complied with Telcordia GR-468
Key parameter
Parameter | Symbol | Min | Type | Max | Unit | Test conditions |
Threshold Current | Ith | 8 | 12 | mA | CW, @T=25°C | |
| 20 | 25 | CW, @T=85°C | ||||
Slope Efficiency | SE | 0.35 | 0.45 | W/A | Ith+20 @25°C | |
| 0.25 | 0.3 | Ith +20 @85°C | ||||
Optical output power | Pf | 7.0 | 9 | mW | Ith +20 @25°C | |
| 5 | 6 | Ith +20 @85°C | ||||
Forward Voltage | Vf | 1.12 | 2 | V | If= Ith +20 | |
Series Resistance | Rs | 8 | 12 | Ω | Ith +20 | |
| Bias Current | Iop | 80 | mA | CW | ||
Reverse leakage current | Ir | 0.1 | 1 | mA | @ -2V | |
Wavelength | λ | 1267 | 1270 | 1273 | nm | @ Ith +20, 25°C |
Wavelength/temperature coefficient | dλ/dT | 0.09 | 0.12 | nm/°C | -40～85°C | |
Side Mode Suppression Ratio | SMSR | 35 | 45 | dB | @ Pf = 5 mW,-40～85°C | |
Farfield（Vertical） | θ⊥ | 25 | 30 | 35 | degree | @ Ith +20 |
Farfield（Horizontal） | θ// | 20 | 25 | 30 | degree | @ Ith +20 |
3dB Bandwidth | 8 | 10 | GHz | @ Ith +20 |
Absolute Maximum Ratings
Parameter | Symbol | Units | Min | Max |
Storage Temperature | Ts | °C | -40 | 100 |
Operating Temperature | To | °C | -40 | 85 |
Forward power | PF | mW | 40 | |
Forward Current | IF | mA | 150 | |
Reverse Voltage | Vr | V | 2 | |
ESD level | ESD | V | 500 |
Recommended Bonding condition
Process | Recommended Conditions | |
Die attachment (Die Bonding) | Solder | AuSn |
Temperature | <350 | |
Dwell time | <10 sec | |
Pressure | 30 g | |
Ambient | N2 flow | |
Wire Bonding | Au Wire | |
Ball bond | ||
Diameter of wire | 25 µm | |
Weight | 30 g | |
Temperature | <200 | |
Dimensions and layout
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